
UG043, April 26, 2014
phy_ctrli_dq/dqs_croe{a,b}
Data a and b termination resistance enable signal for dq/dqs
phy_ctrlo_write_level_out
Write leveling output for byte
Table 2: DDR PHY External Memory Interface Port List
SDRAM differential clock signal (positive polarity)
SDRAM differential clock signal (negative polarity)
SDRAM clock enable control signal
SDRAM on die termination control signal
SDRAM write enable control signal
Internal use only. Leave unconnected.
SDRAM DQS bus, which is used to clock DQ bus
SDRAM DQS bus, which is used to clock DQ bus
Table 3: DDR PHY Parameter List
`DEF_USE_CONTROLLER,
`DEF_NOT_USE_CONTROLLER
Specifies whether the hard controller
should be used in the design
Number of memory ranks in system
`DEF_IO_RXSD_BYPASS_MUX
`DEF_IO_RXSD_NO_BYPASS_MUX
Specifies data at full-rate vs half-rate
(Bypass=Full-rate, No_bypass=Half-rate)
0 -> One extra clock cycle to load data
1 -> No extra cycle
Applies to both read and write paths
1 -> extra one clock delay in 2X mode.
1 -> Wide-bus used in fabric to convert
incoming data to quarter-rate. PHY
provides quarter-rate clock on clk_div4.
BYTE_LANE[N/8-1:0]_DLL_ADJ_DQ
DQ Slave adjust for BYTE_LANE
BYTE_LANE[N/8-1:0]_DLL_ADJ_DQS
DQS Slave adjust for BYTE_LANE
BYTE_LANE[N/8-1:0]_DLL_ADJ_DP
DP Slave adjust for BYTE_LANE
BYTE_LANE[N/8-
1:0]_WR_LVL_DQ_SELECT
`WLVL_SELECT_DQ0 up to
`WLVL_SELECT_DQ7
DQ bit used for write leveling
BYTE_LANE_DLL_DQSX9_CLK_ADJ
DLL adjust for wpb_tx_dqsx9_clk(0.25T)
BYTE_LANE_DLL_DQX9_CLK_ADJ
DLL adjust for wpb_tx_dqx9_clk(0.75T)
BYTE_LANE_CAC_DLL_ADJ_DQSN
DP Slave adj for CAC byte lanes (0.35T)
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