Achronix Speedster22i HD1000 Development Kit User Guide Manual de usuario Pagina 42

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42 UG034, July 1, 2014
Signal Name
Pin on HD1000 (U33)
Pin on MT41J128M16JT (U21)
DDR3_BA1
AD1
N8
DDR3_BA2
AN2
M3
DDR3_CK
AF10
J7
DDR3_CK_N
AF9
K7
DDR3_CKE
AN4
K9
DDR3_CS_N
AT4
L2
DDR3_WE_N
AF1
L3
DDR3_RAS_N
AE2
J3
DDR3_CAS_N
AJ2
K3
DDR3_RST_N
AP4
T2
DDR3_ODT
AM3
K1
DDR3_LDQS0
AY2
F3
DDR3_LDQS0_N
AY1
G3
DDR3_UDQS0
AF13
C7
DDR3_UDQS0_N
AF14
B7
DDR3_LDM0
AU2
E7
DDR3_UDM0
AC14
D3
RLDRAM3 Devices (U31, U36)
You can use the two 16 Mbx36 RLDRAM3 memory devices (Micron MT44K32M18RB-093)
soldered on the board. The HD1000 drives the memory signals using dedicated GPIOs.
Although you may repurpose these IO pins, Bank West-South (Byte 0 12), on your designs,
you must maintain the allocation shown in Table 14 to use the devices provided on the
board.
Note: Do not reallocate these Ios on the ACX-BRD-HD1000-100G development board. This could
lead to unexpected behavior.
Note: Table 14 shows only the logical connection for application development. Relevant voltage levels
are driven on the board by additional circuitry.
Table 14: ACX-BRD-HD1000-100G Memory Interfaces RLDRAM3
Signal Name
Pin on HD1000 (U33)
Pin on MT44K32M18RB
(U31)
(U36)
RLD_DQ0
U11
D11
RLD_DQ1
V11
E10
RLD_DQ2
AA11
C8
RLD_DQ3
T11
C10
RLD_DQ4
T12
C12
RLD_DQ5
AB11
B9
RLD_DQ6
Y12
B11
RLD_DQ7
AB12
A8
RLD_DQ8
AA12
A10
RLD_DQ9
T4
J10
RLD_DQ10
U3
K11
RLD_DQ11
T3
K13
RLD_DQ12
AB4
L8
RLD_DQ13
W4
L10
RLD_DQ14
V3
L12
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